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| Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silicon PIN Photodiode with Daylight Filter SFH 235 FA Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet fur Anwendungen bei Features q Especially suitable for applications of 880 nm q Kurze Schaltzeit (typ. 20 ns) q 5 mm-Plastikbauform im LED-Gehause q Auch gegurtet lieferbar Anwendungen q IR-Fernsteuerung von Fernseh- und 880 nm q Short switching time (typ. 20 ns) q 5 mm LED plastic package q Also available on tape Applications q IR-remote control of hi-fi and TV sets, video Rundfunkgeraten, Videorecordern, Lichtdimmern und Geratefernsteuerungen q Lichtschranken fur Gleich- und Wechsellichtbetrieb tape recorders, dimmers, remote control of various equipment q Photointerrupters Typ (*vorher) Type (*formerly) SFH 235 FA (*SFH 235) Bestellnummer Ordering Code Q62702-P273 Semiconductor Group 1 1998-04-20 feo06422 SFH 235 FA Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Lottemperatur (Lotstelle 2 mm vom Gehause entfernt bei Lotzeit t 3 s) Soldering temperature in 2 mm distance from case bottom (t 3 s) Sperrspannung Reverse voltage Verlustleistung, TA = 25 C Total power dissipation Symbol Symbol Wert Value - 40 ... + 80 230 Einheit Unit C C Top; Tstg TS VR Ptot 32 150 V mW Kennwerte (TA = 25 C, = 870 nm) Characteristics Bezeichnung Description Fotoempfindlichkeit Spectral sensitivity VR = 5 V, Ee = 1 mW/cm2 Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle Symbol Symbol Wert Value 50 ( 40) Einheit Unit A S S max 900 740 ... 1120 nm nm A LxB LxW H 7 2.65 x 2.65 mm2 mm x mm 0.6 ... 0.8 mm 65 Grad deg. Semiconductor Group 2 1998-04-20 SFH 235 FA Kennwerte (TA = 25 C, = 870 nm) Characteristics (cont'd) Bezeichnung Description Dunkelstrom, VR = 10 V Dark current Spektrale Fotoempfindlichkeit Spectral sensitivity Quantenausbeute Quantum yield Leerlaufspannung, Ee = 0.5 mW/cm2 Open-circuit voltage Kurzschlustrom, Ee = 0.5 mW/cm2 Short-circuit current Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 ; VR = 5 V; = 850 nm; Ip = 800 A Durchlaspannung, IF = 100 mA, E = 0 Forward voltage Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 10 V Nachweisgrenze, VR = 10 V Detection limit Symbol Symbol Wert Value 2 ( 30) 0.63 0.9 320 ( 250) 22 20 Einheit Unit nA A/W Electrons Photon mV A ns IR S VO ISC tr, tf VF C0 TCV TCI NEP 1.3 72 - 2.6 0.03 4.0 x 10- 14 V pF mV/K %/K W Hz cm * Hz W D* 6.6 x 1012 Semiconductor Group 3 1998-04-20 SFH 235 FA Relative spectral sensitivity Srel = f () 100 OHF01430 Photocurrent IP = f (Ee), VR = 5 V Open-circuit voltage VO = f (Ee) 10 3 OHF01428 Total power dissipation Ptot = f (TA) 10 4 mV Srel % 80 70 60 50 40 30 20 10 0 400 P A VO 10 3 160 mW Ptot 140 120 100 OHF00398 10 2 VO 10 1 10 2 80 60 P 10 0 10 1 40 20 10 600 800 1000 nm 1200 -1 10 0 10 1 10 2 W/cm 2 Ee 10 10 4 0 0 0 20 40 60 80 C 100 TA Dark current IR = f (VR), E = 0 4000 OHF00080 Capacitance C = f (VR), f = 1 MHz, E = 0 100 OHF00081 Dark current IR = f (TA), VR = 10 V, E = 0 10 3 OHF00082 R pA C pF 80 R nA 10 2 3000 70 60 2000 50 40 30 10 1 1000 10 0 20 10 0 0 5 10 15 V VR 20 0 -2 10 10 -1 10 0 10 1 V 10 2 10 -1 0 20 40 60 VR 80 C 100 TA Directional characteristics Srel = f () Semiconductor Group 4 1998-04-20 |
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